PBSS5540Z,115 datasheet

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Маркировка

PBSS5540Z,115
Производитель

NXP Semiconductors
Описание

NXP Semiconductors PBSS5540Z,115 Collector Current (dc) (max): 5A Collector- Emitter Voltage Vceo Max: 40 V Collector-base Voltage: 40V Collector-emitter Voltage: 40V Configuration: Single Dual Collector Current - Collector (ic) (max): 5A Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 150 @ 2A, 2V Dc Current Gain (min): 250 Emitter- Base Voltage Vebo: 6 V Emitter-base Voltage: 6V Frequency (max): 120MHz Frequency - Transition: 120MHz ID_COMPONENTS: 1949586 Lead Free Status / Rohs Status: Lead free / RoHS Compliant Maximum Dc Collector Current: 5 A Maximum Operating Frequency: 120 MHz Maximum Operating Temperature: + 150 C Minimum Operating Temperature: - 65 C Mounting: Surface Mount Mounting Style: SMD/SMT Mounting Type: Surface Mount Number Of Elements: 1 Operating Temp Range: -65C to 150C Operating Temperature Classification: Military Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261 Package Type: SOT-223 Pin Count: 3 +Tab Power - Max: 2W Power Dissipation: 2000 mW Series: - Transistor Polarity: PNP Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 160mV @ 200mA, 2A Voltage - Collector Emitter Breakdown (max): 40V Product Category: Transistors Bipolar - BJT RoHS: yes Collector- Base Voltage VCBO: 40 V Collector- Emitter Voltage VCEO Max: 40 V Emitter- Base Voltage VEBO: 6 V Maximum DC Collector Current: 5 A Gain Bandwidth Product fT: 120 MHz DC Collector/Base Gain hfe Min: 250 at 500 mA at 2 V, 200 at 1 A at 2 V, 150 at 2 A at 2 V, 50 at 5 A at 2 V DC Current Gain hFE Max: 250 at 500 mA at 2 V Maximum Power Dissipation: 2000 mW Factory Pack Quantity: 1000 Part # Aliases: PBSS5540Z T/R Other Names: 568-4172-2, 934055496115, PBSS5540Z T/R
Количество страниц

9 шт.
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